Abstract—In this paper, we formulate and investigate the reduced master equation as a novel and fast simulation method of spin dependent transport in ferromagnetic single electron transistors (FMSET) which so far this method for modeling of FMSET has not been mentioned in no paper. This simulation method follows the steady state master equation in which all charge states of the system are considered, whereas the charge states decrease in reduced master equation. This method is based on two degrees of electron freedom which are charge and spin. This is applied in the condition that the orthodox tunneling theory is applicable to calculate the tunneling rate of electrons through barriers. A comparison between current-bias voltage and current-gate voltage characteristics of different ferromagnetic single electron transistors following the reduced and full master equation methods shows that the results at low bias voltages are the same. Consequently, the reduced master equation method for simulation of current-bias/gate voltage of FMSETs is more simplified and improves the speed of numerical simulation, and also the modeling results are as accurate as the results of the full master equation method at low bias conditions in current scale.

Index Terms—Master equation method, Single electron transistor, sequential tunneling regime, Spin.

S. Asgari is with the electrical engineering department of Sharif University of Technology, Tehran, Iran (e_asgari@alum.sharif.edu).
R. Faez is with the electrical engineering department of Sharif University of Technology, Tehran, Iran (faez@ sharif.edu).

Cite:S. Asgari and R. Faez, "Reduced Master Equation as a Novel and Fast Method for Modeling of Spin Transport in Ferromagnetic Single Electron Transistors," International Journal of Applied Physics and Mathematics vol. 1, no. 1, pp. 48-53, 2011.