Abstract—A novel technique to measure In segregation profiles is proposed by which depth composition information is converted to surface composition information by creating a miscut surface which intersects a previously grown GaAs/InGaAs/GaAs heterostructure. The surface chemical profiles were measured by static Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and High Resolution X-ray Diffraction (HRXRD) measurements were made to allowdetermination of the thicknesses of all the layers in the structure and the profile of the miscut surface. The translation from vertical to horizontal coordinates could then be made with acceptable precision. In segregation was clearly observed and appears as an approximately exponential profile at both the GaAs/InGaAs and InGaAs/GaAs interfaces.

Index Terms—In segregation, III-V compound semi-conductors, ToF-SIMS, HRXRD, MBE.

The authors are with La Trobe University, Faculty of Science, Technology and Engineering, School of Engineering and Mathematical Sciences, Department of Electronic Engineering, Bundoora, Victoria 3086, Australia (e-mail: aloykaew@students.latrobe.edu.au, B.Usher@latrobe.edu.au, R.Jones@latrobe.edu.au, P.Pigram@latrobe.edu.au).

Cite:A. Loykaew, B. F. Usher, R. T. Jones, and P. J. Pigram, "A Novel Sample Structure for the Measurement of Indium Segregation Profiles in GaAs/InGaAs/GaAs Heterostructures," International Journal of Applied Physics and Mathematics vol. 3, no. 3, pp. 191-197, 2013.