Abstract—This study deposited Cu(In,Ga)Se2(CIGS) thin films on Mo/SiOx/SS431 substrates using magnetron sputtering. Our objectives were to introduce a Mo-5%Na target as a source of incorporate Na to the chalcopyrite structure and investigate its influence on the crystallinity of CIGS thin films. Experimental results demonstrate that adding Na in this manner can enhance the distribution of Na on the surface as well as the depth profile. When the thickness ratio of Mo-5%Na: Mo was 2.8%, the atomic ratio of Na was 0.48%, which enhanced crystallinity of CIGS. Excess Na dopant led to the formation of NaInSe2 phase, which increases the number of In vacancies in chalcopyrite, thereby reducing crystallinity. The results of bending tests demonstrate that the adhesion of SiOx to SS431 is superior to the adhesion of SiOx to Mo.

Index Terms—Cu(In,Ga)Se2, crystallinity, Na dopant.

The authors are with the Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan (e-mail: ielinyc@cc.ncue.edu.tw).

Cite:Y. C. Lin, Z. H. Shi, C. H. Shen, and Y. L. Chen, "Na-Doped Mo Target Sputtering for CIGS Thin Film Solar Cells on Stainless Steel Substrate," International Journal of Applied Physics and Mathematics vol. 3, no. 3, pp. 157-160, 2013.