Abstract—PZT films were deposited on the Pt/TiO₂/Si(100) substrate at low temperature as low as 380 °C by metal-organic chemical vapor deposition (MOCVD) process. The effects of the temperature annealing by conventional furnace annealing (CFA) on the crystallization, hysteresis loops and leakage current of PZT films were investigated. After the annealing treatment, the films were transformed into polycrystalline PZT thin films with (001) and (100) orientation, respectively. Moreover, the crystal orientation (001/100) of the films were increased by the increases in the temperature of annealing. The improved ferroelectric behavior was influenced by grain orientation. The film with higher (001) orientation exhibited higher the remnant polarization (2Pr) and lower leakage current density. PZT at annealing temperature of 590 °C for 20 minutes exhibited the best ferroelectric properties. The 2Pr showed was about 24.80 uC/cm², when the applied voltage was ± 5V, and the leakage current density of the PZT films was about 1.697 × 10^-5 A/cm² at ±5V.

Index Terms—PZT films, MOCVD, annealing treatment, crystallinity, grain orientation.

Masruroh is with the Department of Physics, Faculty of Mathematics and Natural Sciences, Brawijaya University, Malang 65145, Indonesia (e-mail: ruroh@ub.ac.id or rafizen_02@yahoo.com).
M. Toda is with the Department of Chemistry and Chemical Engineering, Yamagata University, Yonezawa-Yamagata 992-8510. WACOM R&D CO., LTD, 568 TANAKA, Fukaya shi, Saitama 369-1108, Japan (email: masa-t@ivory.plala.or.jp)
M. Umeda is with the WACOM R&D Co. Ltd., 568 Tanaka, Fukaya-shi, Saitama 369-1108, Japan.

Cite: Masruroh, Masaru Umeda, and Masayuki Toda, "Influence of Temperature Annealing on the Crystallization, Hysteresis Loops and Leakage Current in Au/PZT/Pt/TiO2/Si(100) Films Grown by Low Temperature MOCVD Method," International Journal of Applied Physics and Mathematics  vol. 2, no. 6, pp. 454-457, 2012.