Abstract—The noise characteristics of Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN CC-HEMT are calculated as a function of gate voltage as well as drain voltage. Also minimum Noise Figure (NF_min) is calculated for different physical parameters. It is shown that the minimum noise figure decreases when the distance between source-gate or gate-drain decrease, or when the gate length decreases. Also the thickness of Al_0.3Ga_0.7N is changed. It is shown that the noise figure decreases when the barrier thickness increases.

Index Terms—AlGaN/GaN, composite-channel (CC) HEMTs, minimum noise figure (NF_min)

R. Madadi is with the Department of Electrical Engineering, Islamic Azad University, Arak, Iran (e-mail: smadadi@ymail.com).
R. Faez is with the Department of Electrical Engineering, Sharif University of technology (e-mail: Faez@sharif.edu).
B. Behtoee is with the Department of Electrical Engineering, Islamic Azad University, Qazvin, Iran (e-mail: B.Behtoee@qiau.ac.ir).

Cite: Robab Madadi, Rahim Faez, and Behrouz Behtoee, "Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs," International Journal of Applied Physics and Mathematics  vol. 2, no. 6, pp. 442-445, 2012.