Abstract—Since its invention in the turn of 20^th century, semiconductors have always riddled the minds of contemporary science. The various properties of the semiconductors have been studied using spectroscopy, Hall Effect experiment or simple measurement methods under different conditions. The behavior observed has led to a different aspect and hence a different application. The aim of this paper is to study the properties of a semi-conductor bar specially the magneto-resistance, carrier concentration, Energy band gap and the effect of magnetic field on Hall coefficient using a new experimental setup and also discuss its application. Another objective of this paper has been validating the Drude’s Model and proposing a solution to the Hall Effect drawback. The design can be used as a replacement to the Hall Effect experiment where as it incorporates the magnetic field’s effect for the Hall co-efficient. This experiment employs only magnetic field to determine the magneto resistance unlike Hall Effect where along with magnetic field electric field is also used.

Index Terms—Experimental set-up, hall-effect, drude’s model, magneto-resistance

Rourav Basak is with National Institute Technology, Durgapur (e-mail: rouravbasak@gmail.com).

Cite: Rourav Basak, "Novel Experimental Setup to Study the Magneto-Resistance of Semiconductors and Its Industrial Application," International Journal of Applied Physics and Mathematics  vol. 2, no. 4, pp.  281-283, 2012.